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PMD2001D
MOSFET driver
Rev. 02 -- 28 August 2009 Product data sheet
1. Product profile
1.1 General description
NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
1.2 Features
I I I I I Switching transistors in push-pull configuration Application-optimized pinout Space-saving solution Internal connections to minimize layout effort Reduces component count
1.3 Applications
I MOSFET driver I Power bipolar transistor driver I Output current booster for operational amplifier
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM Quick reference data Parameter collector-emitter voltage collector current peak collector current single pulse; tp 1 ms Conditions open base Min Typ Max 40 0.6 1 Unit V A A
Per transistor; for the PNP transistor with negative polarity
NXP Semiconductors
PMD2001D
MOSFET driver
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 Pinning Description base TR1, TR2 collector TR2 collector TR2 emitter TR1, TR2 collector TR1 collector TR1
1 2 3
006aaa659
Simplified outline
6 5 4
Symbol
6 5 4
TR1
TR2
1
2
3
3. Ordering information
Table 3. Ordering information Package Name PMD2001D SC-74 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 Type number
4. Marking
Table 4. Marking codes Marking code 9E Type number PMD2001D
PMD2001D_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 28 August 2009
2 of 15
NXP Semiconductors
PMD2001D
MOSFET driver
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO IC ICM IBM Parameter collector-base voltage collector-emitter voltage collector current peak collector current peak base current single pulse; tp 1 ms Per device Ptot total power dissipation Tamb 25 C
[1] [2] [3]
Conditions open emitter open base single pulse; tp 1 ms
Min -
Max 40 40 0.6 1 0.1 0.2
Unit V V A A A A
Per transistor; for the PNP transistor with negative polarity
-65 -65
320 400 540 150 +150 +150
mW mW mW C C C
Tj Tamb Tstg
[1] [2] [3]
junction temperature ambient temperature storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint.
600
(1)
006aaa768
Ptot (mW) 400
(2)
(3)
200
0 -75
-25
25
75
125 175 Tamb (C)
(1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1cm2 (3) FR4 PCB, standard footprint
Fig 1.
PMD2001D_2
Power derating curves
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 28 August 2009
3 of 15
NXP Semiconductors
PMD2001D
MOSFET driver
6. Thermal characteristics
Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1] [2] [3]
Min -
Typ -
Max 390 315 230
Unit K/W K/W K/W
[1] [2] [3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint.
103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01
006aaa769
0 1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMD2001D_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 28 August 2009
4 of 15
NXP Semiconductors
PMD2001D
MOSFET driver
103 duty cycle = Zth(j-a) (K/W) 102 1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01
006aaa770
0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103
FR4 PCB, mounting pad for collector 1cm2
Fig 3.
103
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa771
duty cycle = Zth(j-a) (K/W) 102 1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 0
1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
Ceramic PCB, Al2O3, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMD2001D_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 28 August 2009
5 of 15
NXP Semiconductors
PMD2001D
MOSFET driver
7. Characteristics
Table 7. Characteristics Tamb = 25 C unless otherwise specified Symbol Parameter Per NPN transistor ICBO collector-base cut-off VCB = 40 V; IE = 0 A current VCB = 40 V; IE = 0 A; Tj = 150 C DC current gain VCE = 5 V; IC = 1 mA VCE = 5 V; IC = 200 mA VCE = 5 V; IC = 500 mA VCEsat VBEsat collector-emitter saturation voltage base-emitter saturation voltage IC = 200 mA; IB = 20 mA IC = 500 mA; IB = 50 mA IC = 200 mA; IB = 20 mA IC = 500 mA; IB = 50 mA
[1] [1] [1]
Conditions
Min 100 100 50 100 80
[1]
Typ 210 170 100 150 300 0.86 0.95 180 125 80 -130 -280 -0.87 -0.98 3 3 6 2 3 5
Max 10 10 300 250 500 1 1.1 -10 -10 300 -250 -500 -1 -1.1 -
Unit nA A
hFE
mV mV V V nA A
Per PNP transistor ICBO collector-base cut-off VCB = -40 V; IE = 0 A current VCB = -40 V; IE = 0 A; Tj = 150 C DC current gain VCE = -5 V; IC = -1 mA VCE = -5 V; IC = -200 mA VCE = -5 V; IC = -500 mA VCEsat VBEsat collector-emitter saturation voltage base-emitter saturation voltage IC = -200 mA; IB = -20 mA IC = -500 mA; IB = -50 mA IC = -200 mA; IB = -20 mA IC = -500 mA; IB = -50 mA IC = 0.15 A; VI = 7.5 V
[1] [1]
hFE
50 -
mV mV V V ns ns ns ns ns ns
Per device td tr ton ts tf toff
[1]
delay time rise time turn-on time storage time fall time turn-off time
Pulse test: tp 300 s; 0.02
PMD2001D_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 28 August 2009
6 of 15
NXP Semiconductors
PMD2001D
MOSFET driver
800 hFE 600
(1)
006aaa772
1.2 IC (A) 0.8 IB (mA) = 30 27 24 21
006aaa777
18 15 12 9 6 3
400
(3) (4)
(2)
0.4
200
(5)
0 10-1
1
10
102
103 IC (mA)
0 0 2 4 6 8 10 VCE (V)
VCE = 5 V (1) Tamb = 150 C (2) Tamb = 125 C (3) Tamb = 100 C (4) Tamb = 25 C (5) Tamb = -55 C
Tamb = 25 C
Fig 5.
TR1 (NPN): DC current gain as a function of collector current; typical values
1.2
006aaa773
Fig 6.
TR1 (NPN): Collector current as a function of collector-emitter voltage; typical values
1.2
006aaa776
VBE (V) 1.0
(1)
VBEsat (V) 1.0
(1)
0.8
(2)
0.8
(2)
0.6
(3)
0.6
(3)
0.4
0.4
0.2 10-1
1
10
102 IC (mA)
103
0.2 10-1
1
10
102 IC (mA)
103
VCE = 5 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
IC/IB = 20 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
Fig 7.
TR1 (NPN): Base-emitter voltage as a function of collector current; typical values
Fig 8.
TR1 (NPN): Base-emitter saturation voltage as a function of collector current; typical values
PMD2001D_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 28 August 2009
7 of 15
NXP Semiconductors
PMD2001D
MOSFET driver
1
006aaa774
1
006aaa775
VCEsat (V)
(1) (2) (3)
VCEsat (V)
(1) (2)
10-1
10-1
(3)
10-2 10-1
1
10
102 IC (mA)
103
10-2 10-1
1
10
102 IC (mA)
103
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10
Fig 9.
TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values
Fig 10. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values
PMD2001D_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 28 August 2009
8 of 15
NXP Semiconductors
PMD2001D
MOSFET driver
300 hFE
(1)
006aaa778
-1.2 IC (A) -0.8
006aaa783
IB (mA) = -25 -22.5 -20 -17.5 -15 -12.5 -10 -7.5 -5
200
(2)
100
(3)
-0.4 -2.5
0 -10-1
-1
-10
-102 IC (mA)
-103
0 0
-2
-4
-6
-8 -10 VCE (V)
VCE = -5 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C
Fig 11. TR2 (PNP): DC current gain as a function of collector current; typical values
-1.2 VBE (V) -1.0
(1)
Fig 12. TR2 (PNP): Collector current as a function of collector-emitter voltage; typical values
-1.2 VBEsat (V) -1.0
(1)
006aaa779
006aaa782
-0.8
(2)
-0.8
(2)
-0.6
(3)
-0.6
(3)
-0.4
-0.4
-0.2 -10-1
-1
-10
-102 IC (mA)
-103
-0.2 -10-1
-1
-10
-102 IC (mA)
-103
VCE = -5 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
IC/IB = 20 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
Fig 13. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values
Fig 14. TR2 (PNP): Base-emitter saturation voltage as a function of collector current; typical values
PMD2001D_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 28 August 2009
9 of 15
NXP Semiconductors
PMD2001D
MOSFET driver
-1
006aaa780
-1
006aaa781
VCEsat (V)
(1) (2) (3)
VCEsat (V)
-10-1
-10-1
(1) (2)
(3)
-10-2 -10-1
-1
-10
-102
-103 IC (mA)
-10-2 -10-1
-1
-10
-102 IC (mA)
-103
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10
Fig 15. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values
Fig 16. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values
8. Test information
VCC oscilloscope
VI R1 TR2 (probe) 450
DUT
TR1
VO
RE
(probe) 450
oscilloscope
006aaa858
IC = 0.15 A; VI = 7.5 V; R1 = 56 ; RE = 47
Fig 17. Test circuit for switching times
PMD2001D_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 28 August 2009
10 of 15
NXP Semiconductors
PMD2001D
MOSFET driver
9. Package outline
3.1 2.7 6 5 4 0.6 0.2
1.1 0.9
3.0 2.5
1.7 1.3
pin 1 index
1 0.95 1.9 Dimensions in mm
2
3 0.40 0.25 0.26 0.10 04-11-08
Fig 18. Package outline SOT457 (SC-74)
10. Packing information
Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PMD2001D Package SOT457 Description 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2
[1] [2] [3] For further information and the availability of packing methods, see Section 14. T1: normal taping T2: reverse taping
[2] [3]
Packing quantity 3000 -115 -125 10000 -135 -165
PMD2001D_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 28 August 2009
11 of 15
NXP Semiconductors
PMD2001D
MOSFET driver
11. Soldering
3.45 1.95
solder lands 0.95 3.30 2.825 0.45 0.55 occupied area solder paste solder resist
1.60 1.70 3.10 3.20
msc422
Dimensions in mm
Fig 19. Reflow soldering footprint SOT457 (SC-74)
5.30
solder lands 5.05 0.45 1.45 4.45 solder resist occupied area
1.40 4.30
msc423
Dimensions in mm
Fig 20. Wave soldering footprint SOT457 (SC-74)
PMD2001D_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 28 August 2009
12 of 15
NXP Semiconductors
PMD2001D
MOSFET driver
12. Revision history
Table 9. Revision history Release date 20090828 Data sheet status Product data sheet Change notice Supersedes PMD2001D_1 Document ID PMD2001D_2 Modifications:
* *
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Figure 20 "Wave soldering footprint SOT457 (SC-74)": updated Product data sheet -
PMD2001D_1
20060925
PMD2001D_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 28 August 2009
13 of 15
NXP Semiconductors
PMD2001D
MOSFET driver
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
13.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PMD2001D_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 28 August 2009
14 of 15
NXP Semiconductors
PMD2001D
MOSFET driver
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 28 August 2009 Document identifier: PMD2001D_2

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